Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-382-7949 (013827949) |
NCB Code | USA (01) |
Manufacturer | Micro Uspd Inc, Safran Usa Inc, Vishay Dale Electronics Inc, Jaeger Ets, Cs Systemes Dinformation, St Microelectronics Ltd, Thales Sa, Safran Helicopter Engines, Bkc, Giat Industries, Itt Cannon Rf Products, Sagem Telecommunications, Ass Ouvriers En Instruments De, Magneti Marelli Uk Ltd, Thales Avionics Inc |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
1N649 | micro uspd inc | semiconductor device diode | 12969 | RFQ |
14010375-1 | safran usa inc | semiconductor device diode | f6151 | RFQ |
1N649 | vishay dale electronics inc | semiconductor device diode | f4022 | RFQ |
57540-003-1 | jaeger ets | semiconductor device diode | f0216 | RFQ |
BA14035 | cs systemes dinformation | semiconductor device diode | f0404 | RFQ |
1N649 | st microelectronics ltd | semiconductor device diode | f8859 | RFQ |
91593907 | thales sa | semiconductor device diode | f6481 | RFQ |
9559050020 | safran helicopter engines | semiconductor device diode | f0228 | RFQ |
1N649 | bkc | semiconductor device diode | 66891 | RFQ |
BLE010026 | giat industries | semiconductor device diode | f5316 | RFQ |
1N649 | itt cannon rf products | semiconductor device diode | f3891 | RFQ |
14010375-1 | sagem telecommunications | semiconductor device diode | faq15 | RFQ |
ER28195-3 | ass ouvriers en instruments de | semiconductor device diode | f6106 | RFQ |
57540-003-1 | magneti marelli uk ltd | semiconductor device diode | f0423 | RFQ |
91607781 | thales sa | semiconductor device diode | f6481 | RFQ |
91371019 | thales sa | semiconductor device diode | f6481 | RFQ |
A1237930 | thales avionics inc | semiconductor device diode | f9111 | RFQ |
99118027 | thales sa | semiconductor device diode | f6481 | RFQ |
99114894 | thales sa | semiconductor device diode | f6481 | RFQ |
91206824 | thales sa | semiconductor device diode | f6481 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MINIMUM REVERSE VOLTAGE,PEAK |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 MICROAMPERES MAXIMUM REVERSE CURRENT,DC |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-01-382-7949, 5961013827949 | ||||
5980-01-127-9290 (5980011279290) | 5930-01-333-3189 (5930013333189) | 5998-01-566-8414 (5998015668414) | 5962-01-414-8707 (5962014148707) | |
5905-01-156-4926 (5905011564926) | 5970-01-662-0059 (5970016620059) | 5945-01-327-8772 (5945013278772) | 5905-01-020-1453 (5905010201453) | |
5962-01-112-3586 (5962011123586) | 5998-00-042-9502 (5998000429502) | 5999-01-020-7611 (5999010207611) | 5905-00-499-6434 (5905004996434) | |
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