With Satellite To Submarine Parts as your purchasing platform, you can procure NSN 5962-01-466-0645 supplies with the benefit of fair-market pricing, quality assurance, and timely delivery. As you explore the catalog organized on this page, be sure to take note of in-demand part numbers like IDT7164L45D8, 5962-3829410MXB, 5962-38294, 5962-3829410MXA, P4C164L-45DWMB, and others that are featured. If any items within our NSN 5962-01-466-0645 inventory are of interest to you or your operations, take advantage of our quotation services for the means of obtaining information on pricing and procurement. You can do this through the submission of an online Request for Quote (RFQ) form or by contacting our staff directly, either of which will allow you to receive fully customized options for your comparisons.
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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-466-0645 (014660645) |
| NCB Code | USA (01) |
| Manufacturer | Integrated Device Technology Inc, Dla Land And Maritime, Performance Semiconductor Corp, Pyramid Semiconductor Corp |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| IDT7164L45D8 | integrated device technology inc | microcircuit memory | 61772 | RFQ |
| 5962-3829410MXB | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-38294 | dla land and maritime | microcircuit memory | 67268 | RFQ |
| 5962-3829410MXA | dla land and maritime | microcircuit memory | 67268 | RFQ |
| P4C164L-45DWMB | performance semiconductor corp | microcircuit memory | 75569 | RFQ |
| P4C164L-45DWMB | pyramid semiconductor corp | microcircuit memory | 3dtt2 | RFQ |
| 5962-3829410MXX | dla land and maritime | microcircuit memory | 67268 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | NUCLEAR POWER PLANTS |
| CBBL | FEATURES PROVIDED | MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | DATA RETENTION - YES/ACCESS TIME - 45 NS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-466-0645, 5962014660645 | ||||
| 5995-01-680-8281 (5995016808281) | 5998-01-365-5675 (5998013655675) | 5905-01-446-2275 (5905014462275) | 5950-01-318-2417 (5950013182417) | |
| 5945-00-929-7604 (5945009297604) | 5935-00-444-0506 (5935004440506) | 5935-00-532-5259 (5935005325259) | 5998-01-039-5554 (5998010395554) | |
| 5985-01-220-4479 (5985012204479) | 5998-01-384-5393 (5998013845393) | 5962-01-450-4455 (5962014504455) | 5995-00-267-6947 (5995002676947) | |
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