Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number AT-8250, a Agilent Technologies Inc item that is listed alongside the description “Transistor” and the NSN 5961013282839. To guarantee a swift procurement process for NSN part number AT-8250, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.
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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number AT-8250 is manufactured by Agilent Technologies Inc, it is specifically done so under CAGE Code 24539, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5961-01-328-2839, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-328-2839 Item PartTypeName: TRANSISTOR | 5961 | 013282839 | N | A | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
A | G | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
AT-8250 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.070 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 0.213 INCHES NOMINAL |
ABMK | OVERALL WIDTH | 0.070 INCHES NOMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND-4.0 MAXIMUM GATE TO SOURCE VOLTAGE |
PMLC | PRECIOUS MATERIAL AND LOCATION | PACKAGE BASE GOLD |
ABKW | OVERALL HEIGHT | 0.035 INCHES NOMINAL |
CTRD | POWER RATING PER CHARACTERISTIC | 450.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ABBH | INCLOSURE MATERIAL | CERAMIC |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
TTQY | TERMINAL TYPE AND QUANTITY | 4 RIBBON |
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