Part Number 75B049008-1001 with NSN 5962013652255 by Boeing Company The - Request for Quote Now!

Part Number: 75B049008-1001
Alternate P/N: 75B0490081001
Manufacturer: Boeing Company The
NIIN: 013652255
Item Name : Microcircuit Memory
CAGE Code: 76301
FSG: 59 Electrical and Electronic Equipment Components
Country: USA
NCB Code: 01

Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number 75B049008-1001, a Boeing Company The item that is listed alongside the description “Microcircuit Memory” and the NSN 5962013652255. To guarantee a swift procurement process for NSN part number 75B049008-1001, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.

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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number 75B049008-1001 is manufactured by Boeing Company The, it is specifically done so under CAGE Code 76301, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5962-01-365-2255, one can also determine that this part falls under FSC 5962 Microcircuits Electronic. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.

NSN Information for Part Number 75B049008-1001 with NSN 5962-01-365-2255, 5962013652255

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-365-2255

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620136522550NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
75B049008-1001523

Characteristics Data of NSN 5962-01-365-2255, 5962013652255

MRCCriteriaCharacteristic
AGAVEND ITEM IDENTIFICATIONLUG IN UNIT E/I FSCM 76301
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
CZERMEMORY DEVICE TYPEPROM
TTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
ZZZKSPECIFICATION/STANDARD DATA96906-MIL-STD-883 GOVERNMENT STANDARD
AEHXMAXIMUM POWER DISSIPATION RATING633.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT,DIGITAL-PROGRAMMABLE READ ONLY MEMORY (PROM)
CZEQTIME RATING PER CHACTERISTIC50.00 NANOSECONDS NOMINAL ACCESS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDPROGRAMMED
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED
TESTTEST DATA DOCUMENT76301-75B049008-1001 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNI

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