Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number MFE202, a Freescale Semiconductor Inc item that is listed alongside the description “Transistor” and the NSN 5961012707877. To guarantee a swift procurement process for NSN part number MFE202, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.
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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number MFE202 is manufactured by Freescale Semiconductor Inc, it is specifically done so under CAGE Code 04713, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5961-01-270-7877, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-270-7877 Item PartTypeName: TRANSISTOR | 5961 | 012707877 | N | B | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
B | A | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
352-1140-020 | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
BBJD | FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND-10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
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