Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number QPND-3022, a Hewlett-Packard Company item that is listed alongside the description “Semiconductor Device Diode” and the NSN 5961014676583. To guarantee a swift procurement process for NSN part number QPND-3022, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.
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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number QPND-3022 is manufactured by Hewlett-Packard Company, it is specifically done so under CAGE Code 54893, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5961-01-467-6583, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-467-6583 Item PartTypeName: SEMICONDUCTOR DEVICE,DIODE | 5961 | 014676583 | 0 | N | A | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | A | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| QPND-3022 | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 30.000 MILLIMETERS MAXIMUM" |
| ABJT | TERMINAL LENGTH | 12.600 MILLIMETERS MAXIMUM" |
| ABKW | OVERALL HEIGHT | 2.400 MILLIMETERS MAXIMUM" |
| ABMK | OVERALL WIDTH | 5.100 MILLIMETERS MAXIMUM" |
| AKPV | MOUNTING FACILITY QUANTITY | 2" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK" |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE" |
| FEAT | SPECIAL FEATURES | HARDNESS CRITICAL ITEM" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 30.000 MILLIMETERS MAXIMUM" |
| ABJT | TERMINAL LENGTH | 12.600 MILLIMETERS MAXIMUM" |
| ABKW | OVERALL HEIGHT | 2.400 MILLIMETERS MAXIMUM" |
| ABMK | OVERALL WIDTH | 5.100 MILLIMETERS MAXIMUM" |
| AKPV | MOUNTING FACILITY QUANTITY | 2" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK" |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE" |
| FEAT | SPECIAL FEATURES | HARDNESS CRITICAL ITEM" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
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