Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number 77A112799P1, a Lockheed Martin Corporation item that is listed alongside the description “Semiconductor Devic” and the NSN 5961013728127. To guarantee a swift procurement process for NSN part number 77A112799P1, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.
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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number 77A112799P1 is manufactured by Lockheed Martin Corporation, it is specifically done so under CAGE Code 03538, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5961-01-372-8127, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-372-8127 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 013728127 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 77A112799P001 | 5 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 4TH TRANSISTOR AND 5.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 4TH TRANSISTOR AND 50.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 4TH TRANSIS |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 2ND TRANSISTOR |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 3RD TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 4TH TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.375 INCHES NOMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| ABMK | OVERALL WIDTH | 0.340 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 2ND TRANSISTOR AND-4.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 2ND TRANSISTOR AND-60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 2ND TRAN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 3RD TRANSISTOR AND-4.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 3RD TRANSISTOR AND-60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 3RD TRAN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 1ST TRANSISTOR AND 5.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 1ST TRANSISTOR AND 50.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 1ST TRANSIS |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES NOMINAL COLLECTOR CURRENT,DC ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 1ST TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 9 PIN |
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