Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number S82S123W, a Philips Semiconductors Ltd item that is listed alongside the description “Microcircuit Memory” and the NSN 5962010768399. To guarantee a swift procurement process for NSN part number S82S123W, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.
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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number S82S123W is manufactured by Philips Semiconductors Ltd, it is specifically done so under CAGE Code 18324, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5962-01-076-8399, one can also determine that this part falls under FSC 5962 Microcircuits Electronic. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-076-8399 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 010768399 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | U | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
HM9-7603-2 | 2 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DI |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 84.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 82577-932821 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
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