Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number 561059, a Raytheon Company item that is listed alongside the description “Semiconductordeviceset” and the NSN 5961007525259. To guarantee a swift procurement process for NSN part number 561059, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.
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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number 561059 is manufactured by Raytheon Company, it is specifically done so under CAGE Code 96214, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5961-00-752-5259, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-752-5259 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 007525259 | N | |||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | ||||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1N646 | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM REVERSE VOLTAGE,PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.140 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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