Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number H8000313-001T, a Raytheon Company item that is listed alongside the description “Semiconductor Device Thyristor” and the NSN 5961014001651. To guarantee a swift procurement process for NSN part number H8000313-001T, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.
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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number H8000313-001T is manufactured by Raytheon Company, it is specifically done so under CAGE Code 82577, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5961-01-400-1651, one can also determine that this part falls under FSC 5961 Semiconductor Devices and Associated Hardware. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-400-1651 Item PartTypeName: SEMICONDUCTOR DEVICE,THYRISTOR | 5961 | 014001651 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
SES729 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 16.89 MILLIMETERS MAXIMUM |
ABMK | OVERALL WIDTH | 16.38 MILLIMETERS MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-257AA |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 AMPERES FORWARD CURRENT, TOTAL RMS HORSEPOWER METRIC AND 100.00 AMPERES PEAK FORWARD SURGE CURRENT NANOAMPERES |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
ABBH | INCLOSURE MATERIAL | METAL |
ABKW | OVERALL HEIGHT | 5.08 MILLIMETERS MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
CTRD | POWER RATING PER CHARACTERISTIC | 20.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK AND 0.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR UNIVERSAL |
TEST | TEST DATA DOCUMENT | 82577-H8000313 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
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