Whether you are in search of military and defense parts, aerospace parts, or other similar product solutions, Satellite To Submarine Parts is your one-stop shop. Thank you for your interest in part number 722912-50, a Raytheon Company item that is listed alongside the description “Microcircuit Memory” and the NSN 5962012022952. To guarantee a swift procurement process for NSN part number 722912-50, be sure to request a quote by filling out and submitting the RFQ form below, and one of our experts will offer a customized solution for your comparisons in response.
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We list everything with as much relevant information as possible to ensure that customers can swiftly identify and procure the exact products they need. For instance, while part number 722912-50 is manufactured by Raytheon Company, it is specifically done so under CAGE Code 05869, a unique identifier assigned to a particular facility by the DLA that supplies to various government or defense agencies. Additionally, using the first digits of the NSN 5962-01-202-2952, one can also determine that this part falls under FSC 5962 Microcircuits Electronic. Keeping this in mind, initiate the purchasing process today to see why so many customers depend on us for the NSN items they require.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-202-2952 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 012022952 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
ROM/PROM FAMILY 008 | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | SCHOTTKY AND BIPOLAR AND PROGRAMMED AND MONOLITHIC AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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